- Discrete Semiconductor Products
- Transistors - IGBTs - Single
Image
Part Number
Manufacturer
Description
Unit Price
In Stock
APT70GR65B2SCD30
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Bulk
Series : *
Part Status : Obsolete
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 650V
Current - Collector (Ic) (Max) : 134A
Current - Collector Pulsed (Icm) : 260A
Vce(on) (Max) @ Vge, Ic : 2.4V @ 15V, 70A
Power - Max : 595W
Switching Energy : -
Input Type : -
Gate Charge : 305nC
Td (on/off) @ 25°C : 19ns/170ns
Test Condition : 433V, 70A, 4.3 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : T-MAX™[B2]
Packaging : Bulk
Series : *
Part Status : Obsolete
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 650V
Current - Collector (Ic) (Max) : 134A
Current - Collector Pulsed (Icm) : 260A
Vce(on) (Max) @ Vge, Ic : 2.4V @ 15V, 70A
Power - Max : 595W
Switching Energy : -
Input Type : -
Gate Charge : 305nC
Td (on/off) @ 25°C : 19ns/170ns
Test Condition : 433V, 70A, 4.3 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : T-MAX™[B2]
0
100 in stock
APT75GN120B2G
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : -
Part Status : Not For New Designs
IGBT Type : Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 200A
Current - Collector Pulsed (Icm) : 225A
Vce(on) (Max) @ Vge, Ic : 2.1V @ 15V, 75A
Power - Max : 833W
Switching Energy : 8045µJ (on), 7640µJ (off)
Input Type : Standard
Gate Charge : 425nC
Td (on/off) @ 25°C : 60ns/620ns
Test Condition : 800V, 75A, 1 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3 Variant
Supplier Device Package : -
Packaging : Tube
Series : -
Part Status : Not For New Designs
IGBT Type : Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 200A
Current - Collector Pulsed (Icm) : 225A
Vce(on) (Max) @ Vge, Ic : 2.1V @ 15V, 75A
Power - Max : 833W
Switching Energy : 8045µJ (on), 7640µJ (off)
Input Type : Standard
Gate Charge : 425nC
Td (on/off) @ 25°C : 60ns/620ns
Test Condition : 800V, 75A, 1 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3 Variant
Supplier Device Package : -
0
100 in stock
APT75GN120LG
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : -
Part Status : Active
IGBT Type : Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 200A
Current - Collector Pulsed (Icm) : 225A
Vce(on) (Max) @ Vge, Ic : 2.1V @ 15V, 75A
Power - Max : 833W
Switching Energy : 8620µJ (on), 11400µJ (off)
Input Type : Standard
Gate Charge : 425nC
Td (on/off) @ 25°C : 60ns/620ns
Test Condition : 800V, 75A, 1 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-264-3, TO-264AA
Supplier Device Package : TO-264 [L]
Packaging : Tube
Series : -
Part Status : Active
IGBT Type : Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 200A
Current - Collector Pulsed (Icm) : 225A
Vce(on) (Max) @ Vge, Ic : 2.1V @ 15V, 75A
Power - Max : 833W
Switching Energy : 8620µJ (on), 11400µJ (off)
Input Type : Standard
Gate Charge : 425nC
Td (on/off) @ 25°C : 60ns/620ns
Test Condition : 800V, 75A, 1 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-264-3, TO-264AA
Supplier Device Package : TO-264 [L]
0
534 in stock
APT75GN60B2DQ3G
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : -
Part Status : Obsolete
IGBT Type : -
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 155A
Current - Collector Pulsed (Icm) : 225A
Vce(on) (Max) @ Vge, Ic : 1.85V @ 15V, 75A
Power - Max : 536W
Switching Energy : 2500µJ (on), 2140µJ (off)
Input Type : Standard
Gate Charge : 485nC
Td (on/off) @ 25°C : 47ns/385ns
Test Condition : 400V, 75A, 1 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -
Mounting Type : Through Hole
Package / Case : TO-264-3, TO-264AA
Supplier Device Package : -
Packaging : Tube
Series : -
Part Status : Obsolete
IGBT Type : -
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 155A
Current - Collector Pulsed (Icm) : 225A
Vce(on) (Max) @ Vge, Ic : 1.85V @ 15V, 75A
Power - Max : 536W
Switching Energy : 2500µJ (on), 2140µJ (off)
Input Type : Standard
Gate Charge : 485nC
Td (on/off) @ 25°C : 47ns/385ns
Test Condition : 400V, 75A, 1 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -
Mounting Type : Through Hole
Package / Case : TO-264-3, TO-264AA
Supplier Device Package : -
0
100 in stock
APT75GN60BG
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : -
Part Status : Active
IGBT Type : Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 155A
Current - Collector Pulsed (Icm) : 225A
Vce(on) (Max) @ Vge, Ic : 1.85V @ 15V, 75A
Power - Max : 536W
Switching Energy : 2500µJ (on), 2140µJ (off)
Input Type : Standard
Gate Charge : 485nC
Td (on/off) @ 25°C : 47ns/385ns
Test Condition : 400V, 75A, 1 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
Packaging : Tube
Series : -
Part Status : Active
IGBT Type : Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 155A
Current - Collector Pulsed (Icm) : 225A
Vce(on) (Max) @ Vge, Ic : 1.85V @ 15V, 75A
Power - Max : 536W
Switching Energy : 2500µJ (on), 2140µJ (off)
Input Type : Standard
Gate Charge : 485nC
Td (on/off) @ 25°C : 47ns/385ns
Test Condition : 400V, 75A, 1 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
0
6 in stock
APT75GN60LDQ3G
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : -
Part Status : Active
IGBT Type : Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 155A
Current - Collector Pulsed (Icm) : 225A
Vce(on) (Max) @ Vge, Ic : 1.85V @ 15V, 75A
Power - Max : 536W
Switching Energy : 2500µJ (on), 2140µJ (off)
Input Type : Standard
Gate Charge : 485nC
Td (on/off) @ 25°C : 47ns/385ns
Test Condition : 400V, 75A, 1 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-264-3, TO-264AA
Supplier Device Package : TO-264 [L]
Packaging : Tube
Series : -
Part Status : Active
IGBT Type : Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 155A
Current - Collector Pulsed (Icm) : 225A
Vce(on) (Max) @ Vge, Ic : 1.85V @ 15V, 75A
Power - Max : 536W
Switching Energy : 2500µJ (on), 2140µJ (off)
Input Type : Standard
Gate Charge : 485nC
Td (on/off) @ 25°C : 47ns/385ns
Test Condition : 400V, 75A, 1 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-264-3, TO-264AA
Supplier Device Package : TO-264 [L]
0
100 in stock
APT75GP120B2G
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : POWER MOS 7®
Part Status : Active
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 100A
Current - Collector Pulsed (Icm) : 300A
Vce(on) (Max) @ Vge, Ic : 3.9V @ 15V, 75A
Power - Max : 1042W
Switching Energy : 1620µJ (on), 2500µJ (off)
Input Type : Standard
Gate Charge : 320nC
Td (on/off) @ 25°C : 20ns/163ns
Test Condition : 600V, 75A, 5 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3 Variant
Supplier Device Package : -
Packaging : Tube
Series : POWER MOS 7®
Part Status : Active
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 100A
Current - Collector Pulsed (Icm) : 300A
Vce(on) (Max) @ Vge, Ic : 3.9V @ 15V, 75A
Power - Max : 1042W
Switching Energy : 1620µJ (on), 2500µJ (off)
Input Type : Standard
Gate Charge : 320nC
Td (on/off) @ 25°C : 20ns/163ns
Test Condition : 600V, 75A, 5 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3 Variant
Supplier Device Package : -
0
1504 in stock
APT80GA60B
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : -
Part Status : Active
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 143A
Current - Collector Pulsed (Icm) : 240A
Vce(on) (Max) @ Vge, Ic : 2.5V @ 15V, 47A
Power - Max : 625W
Switching Energy : 840µJ (on), 751µJ (off)
Input Type : Standard
Gate Charge : 230nC
Td (on/off) @ 25°C : 23ns/158ns
Test Condition : 400V, 47A, 4.7 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
Packaging : Tube
Series : -
Part Status : Active
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 143A
Current - Collector Pulsed (Icm) : 240A
Vce(on) (Max) @ Vge, Ic : 2.5V @ 15V, 47A
Power - Max : 625W
Switching Energy : 840µJ (on), 751µJ (off)
Input Type : Standard
Gate Charge : 230nC
Td (on/off) @ 25°C : 23ns/158ns
Test Condition : 400V, 47A, 4.7 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
0
11 in stock
APT80GA60LD40
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : POWER MOS 8™
Part Status : Active
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 143A
Current - Collector Pulsed (Icm) : 240A
Vce(on) (Max) @ Vge, Ic : 2.5V @ 15V, 47A
Power - Max : 625W
Switching Energy : 840µJ (on), 751µJ (off)
Input Type : Standard
Gate Charge : 230nC
Td (on/off) @ 25°C : 23ns/158ns
Test Condition : 400V, 47A, 4.7 Ohm, 15V
Reverse Recovery Time (trr) : 22ns
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-264-3, TO-264AA
Supplier Device Package : TO-264
Packaging : Tube
Series : POWER MOS 8™
Part Status : Active
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 143A
Current - Collector Pulsed (Icm) : 240A
Vce(on) (Max) @ Vge, Ic : 2.5V @ 15V, 47A
Power - Max : 625W
Switching Energy : 840µJ (on), 751µJ (off)
Input Type : Standard
Gate Charge : 230nC
Td (on/off) @ 25°C : 23ns/158ns
Test Condition : 400V, 47A, 4.7 Ohm, 15V
Reverse Recovery Time (trr) : 22ns
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-264-3, TO-264AA
Supplier Device Package : TO-264
0
90 in stock
APT80GA90B
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : -
Part Status : Active
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 900V
Current - Collector (Ic) (Max) : 145A
Current - Collector Pulsed (Icm) : 239A
Vce(on) (Max) @ Vge, Ic : 3.1V @ 15V, 47A
Power - Max : 625W
Switching Energy : 1652µJ (on), 1389µJ (off)
Input Type : Standard
Gate Charge : 200nC
Td (on/off) @ 25°C : 18ns/149ns
Test Condition : 600V, 47A, 4.7 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
Packaging : Tube
Series : -
Part Status : Active
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 900V
Current - Collector (Ic) (Max) : 145A
Current - Collector Pulsed (Icm) : 239A
Vce(on) (Max) @ Vge, Ic : 3.1V @ 15V, 47A
Power - Max : 625W
Switching Energy : 1652µJ (on), 1389µJ (off)
Input Type : Standard
Gate Charge : 200nC
Td (on/off) @ 25°C : 18ns/149ns
Test Condition : 600V, 47A, 4.7 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
0
185 in stock
APT85GR120B2
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : -
Part Status : Active
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 170A
Current - Collector Pulsed (Icm) : 340A
Vce(on) (Max) @ Vge, Ic : 3.2V @ 15V, 85A
Power - Max : 962W
Switching Energy : 6mJ (on), 3.8mJ (off)
Input Type : Standard
Gate Charge : 660nC
Td (on/off) @ 25°C : 43ns/300ns
Test Condition : 600V, 85A, 4.3 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : T-MAX™
Packaging : Tube
Series : -
Part Status : Active
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 170A
Current - Collector Pulsed (Icm) : 340A
Vce(on) (Max) @ Vge, Ic : 3.2V @ 15V, 85A
Power - Max : 962W
Switching Energy : 6mJ (on), 3.8mJ (off)
Input Type : Standard
Gate Charge : 660nC
Td (on/off) @ 25°C : 43ns/300ns
Test Condition : 600V, 85A, 4.3 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : T-MAX™
0
100 in stock
APT85GR120L
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : -
Part Status : Active
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 170A
Current - Collector Pulsed (Icm) : 340A
Vce(on) (Max) @ Vge, Ic : 3.2V @ 15V, 85A
Power - Max : 962W
Switching Energy : 6mJ (on), 3.8mJ (off)
Input Type : Standard
Gate Charge : 660nC
Td (on/off) @ 25°C : 43ns/300ns
Test Condition : 600V, 85A, 4.3 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-264-3, TO-264AA
Supplier Device Package : TO-264
Packaging : Tube
Series : -
Part Status : Active
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 170A
Current - Collector Pulsed (Icm) : 340A
Vce(on) (Max) @ Vge, Ic : 3.2V @ 15V, 85A
Power - Max : 962W
Switching Energy : 6mJ (on), 3.8mJ (off)
Input Type : Standard
Gate Charge : 660nC
Td (on/off) @ 25°C : 43ns/300ns
Test Condition : 600V, 85A, 4.3 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-264-3, TO-264AA
Supplier Device Package : TO-264
0
1 in stock
New Original Stock
Competitive Prices
One-stop
Customer Service
Contact Eruic
- krics@eruic.com
- krics@eruic.com
- Room 25i, Block A, Duhui 100 Building, Zhonghang Road, Huaqiang North Street, Futian District, Shenzhen, Guangdong
Customer service
Copyright © 2025 Eruic. All rights reserved.
web.ui.design.webdesign www.wzdzkf.com
Powered by www.wzdzkf.com