CXDM1002N TR
CXDM1002N TR
Manufacturer : Central Semiconductor Corp
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 300 mOhm @ 2A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 6nC @ 5V
Vgs (Max) : 20V
Input Capacitance (Ciss) (Max) @ Vds : 550pF @ 25V
FET Feature : -
Power Dissipation (Max) : 1.2W (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SOT-89
Package / Case : TO-243AA
Availability: 2515 in stock
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